ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,814, issued on Aug. 25, was assigned to Magnachip Semiconductor Ltd. (Cheongju-si, South Korea).
"Fast recovery diode and method for manufacturing the same" was invented by Young Seo Jo (Seoul, South Korea), Ho Hyun Kim (Seoul, South Korea), Ji Yong Lim (Seoul, South Korea) and Chan Ho Park (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A fast recovery diode includes a substrate; an epitaxial layer formed on the substrate; a P-type low-concentration doping region formed in an upper portion of the epitaxial layer and a P-type high-concentration doping region formed on the P-type low-concentration doping region; a P-type guard ring...