US Patent Issued to Semiconductor Energy Laboratory on Aug. 25 for "Metal oxide, formation method of metal oxide, semiconductor device, and manufacturing method of semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,809, issued on Aug. 25, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Kanagawa-ken, Japan).

"Metal oxide, formation method of metal oxide, semiconductor device, and manufacturing method of semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Yoshihiro Komatsu (Ebina, Japan), Hiromi Sawai (Atsugi, Japan), Ryosuke Watanabe (Yamato, Japan), Shinobu Kawaguchi (Isehara, Japan) and Shunichi Ito (Atsugi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the met...