US Patent Issued to Huawei Technologies'Co., 'Ltd.' on Aug. 25 for "Memory, gate-all-around field-effect transistor, and manufacturing method" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,806, issued on Aug. 25, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).

"Memory, gate-all-around field-effect transistor, and manufacturing method" was invented by Luming Fan (Shenzhen, China), Yanxiang Liu (Shanghai), Jeffrey Junhao Xu (Shenzhen, China), Francis Lionel Benistant (Shenzhen, China) and Zhaozhao Hou (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a storage array, at least one source line, at least one word line, and at least one bit line. The storage array includes a plurality of gate-all-around field-effect transistors. The at least one word line is connected to gates of the pluralit...