US Patent Issued to Nexperia on Aug. 25 for "Semiconductor power device with improved ruggedness" (Dutch, German Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,813, issued on Aug. 25, was assigned to Nexperia B.V. (Nijmegen, Netherlands).

"Semiconductor power device with improved ruggedness" was invented by Georgio El Zammar (Hamburg, Germany), Tim Bottcher (Hamburg, Germany), Massimo Cataldo Mazzillo (Nijmegen, Netherlands) and Sonke Habenicht (Nijmegen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarit...