US Patent Issued to Zinite on Aug. 25 for "Source/drain channel interface with nitrogen-containing oxide" (Canadian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,808, issued on Aug. 25, was assigned to Zinite Corp. (Edmonton, Canada).

"Source/drain channel interface with nitrogen-containing oxide" was invented by Douglas Barlage (Edmonton, Canada) and Gem Shoute (Edmonton, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example thin-film transistor includes a source including a body of source material, a drain including a body of drain material, a gate, and a body of semiconductor channel material between the source and the drain. The body of semiconductor channel material includes a metal oxide. The thin-film transistor further includes a source-channel interface between the body of source material...