US Patent Issued to Mitsubishi Electric on Aug. 25 for "Semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,816, issued on Aug. 25, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Tatsuo Harada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench gate type semiconductor device is provided with an active region that is a region where an n+-type emitter layer is provided adjacent to a trench and a thinned region that is a region where the n+-type emitter layer is not provided adjacent to the trench. In the active region, a first n-type carrier accumulation layer is provided as a carrier accumulation layer. In the thinned region, a second n-type carrier accumulation layer having a lower impurity concentrati...