ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,458, issued on Sept. 8, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device with termination structure and... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,459, issued on Sept. 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Package structure having a semiconductor fu... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,460, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Substrate including test circuit and subs... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,461, issued on Sept. 8, was assigned to DENSO Corp. (Kariya-city, Japan), TOYOTA JIDOSHA K.K. (Toyota, Japan), MIRISE Technologies Corp. (Ni... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,462, issued on Sept. 8, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Apparatus with overlapping deep trench and shallow trench and met... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,463, issued on Sept. 8, was assigned to APPLIED MATERIALS Inc. (Santa Clara, Calif.). "Buffer layer for dielectric protection in physical v... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,464, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Structure having 2D material cappin... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,465, issued on Sept. 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Conductive structures and methods o... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,466, issued on Sept. 8, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Integrated PVD tungsten liner and seamless CVD tungs... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,467, issued on Sept. 8, was assigned to Georgia Tech Research Corp. (Atlanta). "Methods for etch barrier deposition and devices made accord... Read More