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US Patent Issued to Micron Technology on July 14 for "Processing in memory registers" (California, Idaho Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,937, issued on July 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Processing in memory registers" was invented by Dmitri Yuda... Read More


US Patent Issued to INTERNATIONAL BUSINESS MACHINES, SAMSUNG ELECTRONICS on July 14 for "Heusler alloy based spin-transfer-torque magnetic tunnel junctions for flash memory and the like" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,938, issued on July 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.) and SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 14 for "Magnetoresistive random-access memory (MRAM) cell and method of operation thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,939, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Magnetoresistive random-access ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Memory devices including ferroelectric cell capacitors and operating methods thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,940, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory devices including ferroelectric cell ... Read More


US Patent Issued to Semiconductor Energy Laboratory on July 14 for "Semiconductor device comprising 3D-memory" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,941, issued on July 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan). "Semiconductor device comprising 3D-memory" was i... Read More


US Patent Issued to Kioxia on July 14 for "Memory system applying read voltage for reading data with small number of fail bits" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,942, issued on July 14, was assigned to Kioxia Corp. (Tokyo). "Memory system applying read voltage for reading data with small number of fa... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Flash memory and read recovery method thereof" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,943, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Flash memory and read recovery method thereo... Read More


US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on July 14 for "Method for manufacturing semiconductor-element-containing memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,944, issued on July 14, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore). "Method for manufacturing semiconductor-elem... Read More


US Patent Issued to Micron Technology on July 14 for "Apparatuses and methods for single and multi memory cell architectures" (Idaho Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,945, issued on July 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Apparatuses and methods for single and multi memory cell ar... Read More


US Patent Issued to QUALCOMM Incorproated on July 14 for "Hybrid boosting for memory write assist" (Indian Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,946, issued on July 14, was assigned to QUALCOMM Incorproated (San Diego). "Hybrid boosting for memory write assist" was invented by Debarg... Read More