US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Flash memory and read recovery method thereof" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,943, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Flash memory and read recovery method thereof" was invented by Hyun Seo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a flash memory including first to third memory cells connected to a cell string, a first selection line configured to select the cell string, a second selection line configured to select a connection with a common source line, a first word line connected to the first memory cell and positioned adjacent to the first or second selection line, a second word line connected to the second memory cell and adjac...