US Patent Issued to QUALCOMM Incorproated on July 14 for "Hybrid boosting for memory write assist" (Indian Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,946, issued on July 14, was assigned to QUALCOMM Incorproated (San Diego).

"Hybrid boosting for memory write assist" was invented by Debarghya Dutta (Kolkata, India), Ramakoti Nimmakayala (Bangalore, India), Rahul Sahu (Bangalore, India) and Diwakar Singh (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory is provided that includes a negative bit line hybrid boost circuit for boosting a discharged bit line to a negative voltage during a negative bit line boost period for a write operation to a selected column in the memory. The hybrid boost circuit uses a charged gate capacitance of a boost transistor and a charged capacitance ...