US Patent Issued to Semiconductor Energy Laboratory on July 14 for "Semiconductor device comprising 3D-memory" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,941, issued on July 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Japan).

"Semiconductor device comprising 3D-memory" was invented by Tomoaki Atsumi (Hadano, Japan) and Junpei Sugao (Isehara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The semiconductor device includes a first memory cell, and a second memory cell thereover. The first memory cell includes first and second transistors, and a first capacitor. The second memory cell includes third and fourth transistors, and a second capacitor. A gate of the first transistor is electrically connected to one of a source and a drain of the second transistor and the first capacito...