US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Memory devices including ferroelectric cell capacitors and operating methods thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,940, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory devices including ferroelectric cell capacitors and operating methods thereof" was invented by Hwayeong Lee (Suwon-si, South Korea) and Seulji Song (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a ferroelectric cell capacitor, and an operating method thereof. For example, an operating method of a memory device, according to some embodiments, may include pre-charging a bit line to a pre-charge voltage, the bit line connected to a ferroelectric cell capacitor to be written to, writing data into the ferr...