US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on July 14 for "Method for manufacturing semiconductor-element-containing memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,944, issued on July 14, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Method for manufacturing semiconductor-element-containing memory device" was invented by Nozomu Harada (Tokyo) and Koji Sakui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A two-stage dynamic flash memory is formed as follows. An N+ layer 20 is formed in a pillar-shaped semiconductor layer 12, which stands on an N+ layer 2a, by performing a heat treatment, thereby producing an effect of forcing a donor impurity out into the pillar-shaped semiconductor layer 12 from a silicide layer 18, which is a layer formed to surround a middle portion of the pi...