ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,352, issued on May 12, was assigned to SHENZHEN UNIVERSITY (Shenzhen, China). "Threshold switching material, threshold switching device and ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,353, issued on May 12, was assigned to Advanced Semiconductor Engineering Inc. (Kaohsiung, Taiwan). "Package structure" was invented by Hai-... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,354, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Package dies including vertical interconnects for signal and power distri... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,355, issued on May 12, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Capacitor structure and method for fabricating the... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,356, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Multi-lateral recessed MIM structure"... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,357, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferromagnetic plates for enhancing in... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,358, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Vertically integrated device stack including system on chip and power man... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,359, issued on May 12, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea). "Deep trench capacitor and method of manufacturing same"... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,360, issued on May 12, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan). "Semiconductor device with protective protrusion" was i... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,361, issued on May 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Dielectric having high-dielectric constant,... Read More