ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,356, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Multi-lateral recessed MIM structure" was invented by Alexander Kalnitsky (San Francisco), Ru-Liang Lee (Hsinchu, Taiwan), Ming Chyi Liu (Hsinchu City, Taiwan), Sheng-Chan Li (Tainan City, Taiwan) and Sheng-Chau Chen (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric stack disposed over a substrate. The dielectric stack has a first plurality of layers interleaved between a second plurality of layers. The dielectric s...