US Patent Issued to SHENZHEN UNIVERSITY on May 12 for "Threshold switching material, threshold switching device and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,352, issued on May 12, was assigned to SHENZHEN UNIVERSITY (Shenzhen, China).

"Threshold switching material, threshold switching device and preparation method thereof" was invented by Feng Rao (Shenzhen, China), Keyuan Ding (Shenzhen, China) and Jintao Chen (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A threshold switching material, a threshold switching device and a preparation method thereof are disclosed. The chemical formula of the threshold switching material is MxD1-x, wherein M is one of La, Ce, Gd, Lu, Sc, Y, Zr, Mo, Hf, W, Ta, D is one of S, Se, Te, and 0.1less than equal toxless than equal to0.8."

The patent was filed on...