ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,360, issued on May 12, was assigned to Murata Manufacturing Co. Ltd. (Kyoto, Japan).
"Semiconductor device with protective protrusion" was invented by Kazuya Kobayashi (Kyoto, Japan), Atsushi Kurokawa (Kyoto, Japan), Hiroaki Tokuya (Kyoto, Japan), Isao Obu (Kyoto, Japan) and Yuichi Saito (Kyoto, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A target element to be protected and a protrusion are arranged on a substrate. An insulating film arranged on the substrate covers the target element and at least a side surface of the protrusion. An electrode pad for external connection is arranged on the insulating film. The electrode pad at least partial...