US Patent Issued to DB HiTek on May 12 for "Deep trench capacitor and method of manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,359, issued on May 12, was assigned to DB HiTek Co. Ltd. (Bucheon-si, South Korea).

"Deep trench capacitor and method of manufacturing same" was invented by Chang Hun Han (Icheon-si, South Korea), Man Lyun Ha (Mungyeong-si, South Korea) and Tae Wook Kang (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed are a deep trench capacitor and a method of manufacturing the same that compensate for a thin thickness in bottom corner areas of an oxide film (e.g., SiO2) grown by thermal oxidation in a deep trench to prevent a deterioration in breakdown voltage characteristics due to electric field concentration in the corner areas of...