ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,136, issued on July 14, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Interconnect through gate cut for stacked FE... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,137, issued on July 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Wire structure for low resistance interconne... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,138, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with assisting layer and me... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,139, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan). "Interconnection structure and method for manufacturin... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,140, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Contact arrangements for deep trenc... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,141, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor structure and fabrication met... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,142, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Method for preparing semiconductor device with a... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,143, issued on July 14, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore). "Semiconductor devices including an air gap adjace... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,144, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan). "Semiconductor device with filling layer" was invented... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,145, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with filling layer and meth... और पढ़ें