US Patent Issued to NANYA TECHNOLOGY on July 14 for "Method for preparing semiconductor device with air spacer" (Taiwanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,142, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Method for preparing semiconductor device with air spacer" was invented by Jung-Hsing Chien (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device including composite pillars, a dielectric isolation structure, a sealing layer, and air spaces. The composite pillars are disposed over a substrate. Each of the composite pillars include a conductive pillar and a dielectric cap over the conductive pillar. The dielectric isolation structure is disposed between adjacent two of the composite pillars. ...