US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Contact arrangements for deep trench capacitors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,140, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact arrangements for deep trench capacitors" was invented by Fu-Chiang Kuo (Hsinchu City, Taiwan), Meei-Shiou Chern (Hsinchu County, Taiwan) and Jyun-Ting Hou (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a first trench that extends along a first lateral direction and a second trench that extends along a second lateral direction; a first metal layer filling each of the first and second trenches; a second metal layer filling each of the first and second trenches, and di...