US Patent Issued to NANYA TECHNOLOGY on July 14 for "Semiconductor device with filling layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,145, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with filling layer and method for fabricating the same" was invented by Tse-Yao Huang (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of conductive layers positioned on the substrate; a filling layer positioned between the plurality of conductive layers; an air gap positioned in the filling layer; and a dielectric layer positioned on the plurality of c...