US Patent Issued to NANYA TECHNOLOGY on July 14 for "Semiconductor device with assisting layer and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,138, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor device with assisting layer and method for fabricating the same" was invented by Chin-Ling Huang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first insulating layer inwardly positioned in a substrate and including a U-shaped cross-sectional profile; a first assisting layer conformally positioned on the first insulating layer and the substrate; a first filler layer positioned on the first assisting layer; and a capping dielectric layer positioned on the substrate and covering the first assi...