US Patent Issued to NANYA TECHNOLOGY on July 14 for "Semiconductor device with filling layer" (Taiwanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,144, issued on July 14, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan).

"Semiconductor device with filling layer" was invented by Tse-Yao Huang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a plurality of conductive layers positioned on the substrate; a filling layer positioned between the plurality of conductive layers; an air gap positioned in the filling layer; and a dielectric layer positioned on the plurality of conductive layers and the filling layer. The fi...