Exclusive

Publication

Byline

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Semiconductor transistor devices including nanostructures between dielectric walls and methods of manufacturing" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,164, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor transistor devices incl... Read More


US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on May 19 for "Semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,165, issued on May 19, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China). "Semiconductor device and method for m... Read More


US Patent Issued to LX Semicon on May 19 for "GaN power device" (South Korean Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,166, issued on May 19, was assigned to LX Semicon Co. Ltd. (Daejeon, South Korea). "GaN power device" was invented by Jang Hyun Yoon (Daejeo... Read More


US Patent Issued to TEXAS INSTRUMENTS on May 19 for "Drain contact extension layout for hard switching robustness" (Texas Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,167, issued on May 19, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Drain contact extension layout for hard switching robustness" was i... Read More


US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on May 19 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,168, issued on May 19, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Suzhou City, China). "Semiconductor device and manufactu... Read More


US Patent Issued to Vanguard International Semiconductor on May 19 for "Semiconductor device integrating a high electron mobility transistor and a resistor" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,169, issued on May 19, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor device integrating a hig... Read More


US Patent Issued to Qorvo US on May 19 for "Shielded gate transistor" (North Carolina, Oregon Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,170, issued on May 19, was assigned to Qorvo US Inc. (Greensboro, N.C.). "Shielded gate transistor" was invented by Subrata Halder (Greensbo... Read More


US Patent Issued to Yangtze Memory Technologies on May 19 for "Semiconductor devices including a plurality of fins with corresponding gate oxide layers, fabrication methods thereof, 3D memories and memory devices" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,172, issued on May 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor devices including a plurality of ... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TSING HUA UNIVERSITY on May 19 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,173, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (H... Read More


US Patent Issued to UNITED MICROELECTRONICS on May 19 for "Semiconductor device and fabricating method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,174, issued on May 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and fabricating method t... Read More