ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,174, issued on May 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan).

"Semiconductor device and fabricating method thereof" was invented by Kai-Kuen Chang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the same includes a substrate, two first field regions, a gate structure, a first isolation structure, and a plurality of second field regions. The two first field regions are disposed in the substrate, and the gate structure is disposed on the substrate, between the two first field regions. The first isolation structure is disposed in one of the two first ...