US Patent Issued to TEXAS INSTRUMENTS on May 19 for "Drain contact extension layout for hard switching robustness" (Texas Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,167, issued on May 19, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Drain contact extension layout for hard switching robustness" was invented by Dong Seup Lee (McKinney, Texas) and Jungwoo Joh (Allen, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a GaN FET on a substrate such as silicon and a buffer layer of III-N semiconductor material. The GaN FET includes both source contacts and drain contacts to a channel layer of III-N semiconductor material. Source contacts to the source region are placed farther from the gate electrode fingertip than drain contacts to the drain region."

The patent was filed on O...