US Patent Issued to LX Semicon on May 19 for "GaN power device" (South Korean Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,166, issued on May 19, was assigned to LX Semicon Co. Ltd. (Daejeon, South Korea).

"GaN power device" was invented by Jang Hyun Yoon (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a GaN power device having a structure improved to have an improved current density. The GaN power device includes a GaN layer, a first electrode and a second electrode formed on the GaN layer in a way to have a separation area therebetween, an AlGaN layer formed on the GaN layer of the separation area, a gate electrode formed over the AlGaN layer in a way to be separated from the first electrode and the second electrode...