US Patent Issued to Yangtze Memory Technologies on May 19 for "Semiconductor devices including a plurality of fins with corresponding gate oxide layers, fabrication methods thereof, 3D memories and memory devices" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,172, issued on May 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor devices including a plurality of fins with corresponding gate oxide layers, fabrication methods thereof, 3D memories and memory devices" was invented by Quan Zhang (Wuhan, China), Lan Yao (Wuhan, China), Boru Xie (Wuhan, China) and Jie Yan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application provide a semiconductor device, a fabrication method thereof, a 3D memory and a memory device, wherein the semiconductor device includes: a substrate including first fins and second fins; a first gate oxide layer d...