ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,170, issued on May 19, was assigned to Qorvo US Inc. (Greensboro, N.C.).

"Shielded gate transistor" was invented by Subrata Halder (Greensboro, N.C.) and Corey A. Nevers (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor is disclosed having a substrate, a device layer disposed over the substrate, a gate electrode disposed over the device layer, and a drain electrode disposed over the substrate and spaced from the gate electrode. A first source electrode is disposed over the substrate opposite the drain electrode and spaced from the gate electrode. A second source electrode is disposed over the substrate spaced from the drain...