ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,275, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Method of manufacturing semiconductor device... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,276, issued on June 16, was assigned to Semiconductor Manufacturing International (Shanghai) Corp. (Shanghai). "Semiconductor structure and... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,278, issued on June 16, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "Transistor, electronic component, and terminal de... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,280, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Eui Bo... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,281, issued on June 16, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Self-aligned gate jumper connecting adjacent... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,282, issued on June 16, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Trench metal-oxide-semiconductor dev... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,283, issued on June 16, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "Semiconductor device and method of fabricating th... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,284, issued on June 16, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device and method of manufacturing semicon... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,285, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Structure for metal gate electrode ... Read More
ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,286, issued on June 16, was assigned to Solsona Enterprise LLC (San Diego). "Vertical thin film transistor with perforated or comb-gate ele... Read More