ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,284, issued on June 16, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device and method of manufacturing semiconductor device" was invented by Tomohiro Moriya (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "On a surface of a portion of a front electrode exposed in an opening of a passivation film, a Ni-deposited film having high solder wettability is provided apart from the sidewalls of the opening of the passivation film. Metal wiring is soldered to the Ni-deposited film. The solder layer is formed only on the Ni-deposited film and thus, the solder layer and the passivation film do not contact each o...