ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,275, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Method of manufacturing semiconductor device" was invented by Jinwoo Lee (Seoul, South Korea), Chunyub Park (Busan, South Korea) and Sutae Kim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device may include forming a hardmask layer on gate lines and intergate insulating portions alternately arranged; respectively forming mandrel lines on regions of the hardmask layer, corresponding to every other one of the intergate insulating portions; conformally forming a spacer material layer, having a th...