US Patent Issued to Solsona Enterprise on June 16 for "Vertical thin film transistor with perforated or comb-gate electrode configuration and fabrication methods for same" (California Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,286, issued on June 16, was assigned to Solsona Enterprise LLC (San Diego).

"Vertical thin film transistor with perforated or comb-gate electrode configuration and fabrication methods for same" was invented by Chong Uk Lee (Carlsbad, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a vertical-type thin film transistor (TFT) and methods of fabricating vertical TFTs. The vertical TFT may comprise a source electrode and a drain electrode, the drain electrode and the source electrode being positioned on vertically separated planes. A semiconductor layer may be arranged in between the source electrode and the drain ele...