ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,283, issued on June 16, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Ming-Hua Tsai (Tainan City, Taiwan), Wei Hsuan Chang (Tainan City, Taiwan) and Chin-Chia Kuo (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device is provided. Recesses are formed in a substrate. A first gate dielectric material is formed on the substrate and filled in the recesses. The first gate dielectric material on the substrate between the recesses is at least partially removed to form a trench. A second gate dielectric mat...