US Patent Issued to Taiwan Semiconductor Manufacturing on May 5 for "Static random access memory with pre-charge circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,975, issued on May 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Static random access memory with pre-ch... Read More

US Patent Issued to Gwangju Institute of Science and Technology on May 5 for "Sram cell structure with 3 p-channel transistors and 3 n-channel transistors and method of operating the sram cell" (South Korean Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,976, issued on May 5, was assigned to Gwangju Institute of Science and Technology (Gwangju, South Korea). "Sram cell structure with 3 p-chann... Read More

US Patent Issued to Micron Technology on May 5 for "Method of forming memory device" (Japanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,977, issued on May 5, was assigned to Micron Technology Inc. (Boise, Idaho). "Method of forming memory device" was invented by Yasuyuki Sakog... Read More

US Patent Issued to Intel on May 5 for "Multi-tier memory structure with graded characteristics" (Oregon, California Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,979, issued on May 5, was assigned to Intel Corp. (Santa Clara, Calif.). "Multi-tier memory structure with graded characteristics" was invent... Read More

US Patent Issued to NANYA TECHNOLOGY on May 5 for "Semiconductor device having gate structure and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,980, issued on May 5, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device having gate structure and metho... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,981, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by Eui... Read More

US Patent Issued to NANYA TECHNOLOGY on May 5 for "Semiconductor device with pad structure and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,982, issued on May 5, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with pad structure and method f... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor device including vertical channel region" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,983, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device including vertical channel ... Read More

US Patent Issued to Changxin Memory Technologies on May 5 for "Semiconductor structure and fabrication method therefor" (Chinese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,984, issued on May 5, was assigned to Changxin Memory Technologies Inc. (Hefei, China). "Semiconductor structure and fabrication method there... Read More

US Patent Issued to NANYA TECHNOLOGY on May 5 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,985, issued on May 5, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure and method of manufacturing ... Read More

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