US Patent Issued to Micron Technology on May 5 for "Method of forming memory device" (Japanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,977, issued on May 5, was assigned to Micron Technology Inc. (Boise, Idaho).

"Method of forming memory device" was invented by Yasuyuki Sakogawa (Sagamihara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one or more embodiments of the disclosure, a method of forming a memory device including a memory region and a periphery region is provided. The method comprises: providing a first insulating layer in the memory region and the periphery region; removing a first part of the first insulating layer in the periphery region and leaving a second part of the first insulating layer in the memory region; providing a second insulating layer ...