US Patent Issued to SAMSUNG ELECTRONICS on May 5 for "Semiconductor device including vertical channel region" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,983, issued on May 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device including vertical channel region" was invented by Moonyoung Jeong (Suwon-si, South Korea), Kiseok Lee (Suwon-si, South Korea), Sangho Lee (Suwon-si, South Korea) and Hyungjun Noh (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first gate structure and a second gate structure on the substrate, a single back gate structure between the first gate structure and the second gate structure, a first structure including a first vertical channel region extending in a vertical dire...