US Patent Issued to Gwangju Institute of Science and Technology on May 5 for "Sram cell structure with 3 p-channel transistors and 3 n-channel transistors and method of operating the sram cell" (South Korean Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,976, issued on May 5, was assigned to Gwangju Institute of Science and Technology (Gwangju, South Korea).

"Sram cell structure with 3 p-channel transistors and 3 n-channel transistors and method of operating the sram cell" was invented by Sung Min Hong (Gwangju, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an SRAM cell structure having 3 P-channel transistors and 3 N-channel transistors. The SRAM cell device includes a first inverter composed of a CMOS; a second inverter composed of a CMOS, the input terminal of which is connected to the output terminal of the first inverter, and the output terminal of which is connected to t...