US Patent Issued to NANYA TECHNOLOGY on May 5 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,985, issued on May 5, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan).

"Semiconductor structure and method of manufacturing the same" was invented by Ying-Cheng Chuang (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of this disclosure provide a method of manufacturing a semiconductor structure, and the method includes the following steps. A substrate with a first barrier layer in an array area and a second barrier layer in the peripheral area is provided. The substrate is etched toward to form recesses in the peripheral area to make a bottom surface of each of the recesses lower than a bottom surface o...