US Patent Issued to Changxin Memory Technologies on May 5 for "Semiconductor structure and fabrication method therefor" (Chinese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,621,984, issued on May 5, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure and fabrication method therefor" was invented by Shuai Guo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This invention relates to a semiconductor structure and a fabrication method therefor. The method for fabricating a semiconductor structure includes: providing a substrate, where a shallow trench isolation structure is formed on the substrate; forming a plurality of transistor accommodating grooves in the active regions, where there is a spacing between the transistor accommodating groove and the shallow trench isolation s...