ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,575, issued on May 12, was assigned to RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY (Suwon, South Korea). "Resistive switching mem... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,576, issued on May 12, was assigned to Future Semiconductor Business Inc (Charlottesville, Va.). "Fabrication of N-face III-nitrides by remo... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,577, issued on May 12, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea). "Method for preparing tran... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,578, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Substrate processing method" was invented by Jeonghoon Ja... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,579, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Ligand selection for ternary oxide thin films"... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,581, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Substrate processing method" was invented by SangHeon Yon... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,582, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of removing a by-product f... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,584, issued on May 12, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device and manufacturing method of semicondu... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,585, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo). "Selective atomic layer etch of Si-based materials" was invented by Mehr... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,586, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo). "Etching method including steps of an oxidation process, a gas based che... Read More