US Patent Issued to Tokyo Electron on May 12 for "Etching method including steps of an oxidation process, a gas based chemical process, and removal of chemical products" (Japanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,586, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo).

"Etching method including steps of an oxidation process, a gas based chemical process, and removal of chemical products" was invented by Akitaka Shimizu (Nirasaki City, Japan), Masaki Hosono (Nirasaki City, Japan) and Kaname Satou (Nirasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method of etching Si or SiN existing on a substrate, includes: forming an oxide film on a surface of Si or SiN by performing a radical oxidation process on the substrate having Si or SiN; performing a gas-based chemical process on the oxide film; and removing reaction products p...