US Patent Issued to Future Semiconductor Business on May 12 for "Fabrication of N-face III-nitrides by remote epitaxy" (Virginia Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,576, issued on May 12, was assigned to Future Semiconductor Business Inc (Charlottesville, Va.).

"Fabrication of N-face III-nitrides by remote epitaxy" was invented by Kyusang Lee (Charlottesville, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "III-Nitrides epilayer(s) are grown "remotely" on a 2D material layer, such as graphene or h-BN, aBN, or polycrystalline BN coated crystalline substrate, where the Nitride-face surface of the epilayer faces the 2D material. A small mechanical force using a 2D material-based layer transfer process is used to separate the III-Nitrides epilayer(s) at their interface with the 2D material layer. Alternatively, t...