ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,581, issued on May 12, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Substrate processing method" was invented by SangHeon Yong (Yongin-si, South Korea), HongSuk Kim (Yongin-si, South Korea), JuHyuk Park (Hwaseong-si, South Korea), KiHun Kim (Yongin-si, South Korea) and SungHa Choi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method comprising a gap-fill process is disclosed. The method includes providing a substrate in which a gap is formed in a surface thereof to a reaction space, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the reaction space, forming a sil...