ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,619, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Static random access memory with pr... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,620, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Static random access memory and... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,621, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory device with alternating ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,622, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Jee Wo... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,623, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure"... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,624, issued on Aug. 11, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Manufacturing method of semiconductor de... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,625, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Ta... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,626, issued on Aug. 11, was assigned to Tokyo Electron Ltd. (Tokyo). "Method for fabricating semiconductor device with oxide semiconductor ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,627, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and manufacturing method thereo... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,628, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device having 2-transistor vertical memory cell and ... Read More