US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Aug. 11 for "Method for forming memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,625, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Method for forming memory device" was invented by Jenn-Gwo Hwu (Taipei City, Taiwan) and Sung-Wei Huang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a metal-insulator-semiconductor (MIS) structure, in which the MIS structure includes a semiconductor layer, an insulating layer over the semiconductor layer, and a metal electrode layer over the insulating layer; performing a soft breakdown process to the MIS structure to form a local breakdown portio...