US Patent Issued to Tokyo Electron on Aug. 11 for "Method for fabricating semiconductor device with oxide semiconductor material" (Japanese, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,626, issued on Aug. 11, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for fabricating semiconductor device with oxide semiconductor material" was invented by Song yun Kang (Tokyo) and Hyuck Soo Yang (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device that includes forming a vertical access transistor including forming bit lines in a first direction on a substrate, forming a polysilicon pillar as a sacrificial pillar over each bit line of the bit lines, forming a gate oxide on side surfaces of the polysilicon pillar, forming a word line, in a second direction, on the polysilicon pillar with th...