ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,622, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jee Woong Kim (Suwon-si, South Korea) and Kyung Hee Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first lower active pattern and a second lower active pattern, a first upper active pattern and a second upper active pattern, a first gate electrode that overlaps the first lower active pattern and the first upper active pattern, a second gate electrode spaced apart from the first gate electrode, a third gate electrode spaced apart from the first gate electrode,...