US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 11 for "Static random access memory and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,620, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Static random access memory and manufacturing method thereof" was invented by Gerben Doornbos (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random access memory and a manufacturing method thereof are provided. The static random access memory includes a first complementary field effect transistor (CFET), a second CFET, a first pass fate transistor and a second pass gate transistor. The first CFET and the second CFET are disposed in a first tier. The first pass gate transistor is connected to the first CFET through a f...